this is information on a product in full production. october 2016 docid025248 rev 4 1/10 10 EMIF06-HSD03F3 emi filter with integrated esd protection for micro-sd card? datasheet ? production data figure 1. pin configuration (bump side) figure 2. functional schematic features ? very low line capacitance to compensate long pcb tracks (2.5 pf typ.) ? high efficiency in esd su ppression up to 18 kv (iec 61000-4-2) ? very low pcb space consumption: ? 1.1 x 2.4 mm ? ultralow leakage current: 20 na max. ? very thin package: 0.605 mm ? smart pinout for easier pcb layout ? high reduction of parasitic elements through integration and wafer level packaging ? lead-free package ? complies with the fo llowing standards: ? iec 61000-4-2 level 4:15 kv (air discharge), 8 kv (contact discharge) application ? sd3.0, uhs-1 sdr104 (208 mhz) description the EMIF06-HSD03F3 chip is a highly integrated device designed to supp ress emi/rfi noise for interface line filtering. the EMIF06-HSD03F3 flip-chip packaging means the package size is equal to the die size. that?s why EMIF06-HSD03F3 is a very small device. additionally, this filter includes esd protection circuitry, which prevents damage to the protected device when subjected to esd surges up 18 kv. flip- hip package c ( bumps) 17 , 2 9 f f , 2 , 2 ' ( 7 , 2 * 1 ' * 1 ' * 1 ' , 2 , 2 ix ox r = 1 l 1 nh = c line = 2.5 pf det v cc www.st.com
application diagram EMIF06-HSD03F3 2/10 docid025248 rev 4 1 application diagram figure 3. schema vcc det cpu gnd sd card contacts face down dat2 dat3 cmd v cc clk dat0 dat1 sd card contacts spring top layer second layer i1 o1 vcc i3 o3 i5 o5 det i2 o2 gnd gnd gnd i4 o4 i6 o6 maximum distance = 50 mm
docid025248 rev 4 3/10 EMIF06-HSD03F3 characteristics 2 characteristics figure 4. electrical characteristics (definitions) table 1. absolute maximum ratings (t amb = 25 c) symbol parameter value unit v pp esd discharge iec 61000-4-2, level 4 for ix pins: air discharge contact discharge esd discharge iec 61000-4-2, level 1 for ox pins: air discharge contact discharge 18 18 10 10 kv t j maximum junction temperature 125 c t op operating temperature range - 30 to + 85 c t stg storage temperature range - 55 to +150 c symbol parameter v = breakdo wn voltage i = leakage current at v v = stand-off voltage v = clamping voltage i = peak pulse current br rm rm rm cl pp v i v cl v br v rm i f v f i rm i pp slope: 1/r d r = dynamic resistance d c line r = i/o = line capacitance series resistance between input and ouptput
characteristics EMIF06-HSD03F3 4/10 docid025248 rev 4 table 2. electrical characteristics (t amb = 25 c) symbol test conditions min. typ. max. unit v br data lines, i r = 1 ma 5 9 v i rm v rm = 3 v per line 20 na r i/o 1 ? c line v line = 0 v, v osc = 30 mv, f = 1 mhz 2.5 3 pf l 1nh rd dynamics resistance, t p = 100 ns io-gnd (positive polarity) 650 m ? gnd-io (negative polarity) 320 v cc v br i r = 1 ma 5 9 v i rm v rm = 3 v 20 na c line v line = 0 v, v osc = 30 mv, f = 1 mhz 40 pf det v br i r = 1 ma 5 9 v i rm v rm = 3 v 20 na c line v line = 0 v, v osc = 30 mv, f = 1 mhz 40 pf
docid025248 rev 4 5/10 EMIF06-HSD03F3 characteristics figure 5. attenuation versus frequency i x , o x figure 6. attenuation versus frequency v cc , det s21(db) 100.0 k 1.0 m 10.0 m 100.0 m 1.0 g -10.00 - 9.00 - 8.00 - 7.00 - 6.00 - 5.00 - 4.00 - 3.00 - 2.00 - 1.00 0.00 i6 i2 i3 i4 i5 i1 f(hz) s21(db) 100.0k 1.0m 10.0m 100.0m 1.0g - 30.00 -22.50 -15.00 - 7.50 0.00 v cc det f(hz) figure 7. esd response to iec 61000-4-2 (+8 kv contact discharge) figure 8. esd response to iec 61000-4-2 (-8 kv contact discharge) 20.0 v / div 20 ns / div v : peak clamping voltage cl v :clamping voltage @ 30 ns cl v :clamping voltage @ 60 ns cl v :clamping voltage @ 100 ns cl 1 2 3 4 19.2 v 109.6 v 13.9 v 6.6 v 2 1 3 4 10.0 v / div 20 ns / div v : peak clamping voltage cl v :clamping voltage @ 30 ns cl v :clamping voltage @ 60 ns cl v :clamping voltage @ 100 ns cl 1 2 3 4 -5.1 v -61.1 v -4.1 v -2.4 v 2 1 3 4 figure 9. digital crosstalk i1-o2 figure 10. analog crosstalk versus frequency 10 ns / div 1.0 v / div p2:rise(c1) 1.99 ns p3: fall(c1) 1.93 ns p1: top(c1) 3.01 ns p4: pkpk(c2) 1.28 ns xtalk(db) 100.0 k 1.0 m 10.0 m 100.0 m 1.0 g -110.00 -100.00 -90.00 -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 v cc - clk i1-o2 i2-o3 f(hz)
characteristics EMIF06-HSD03F3 6/10 docid025248 rev 4 figure 11. tlp measurement y = -0.0078x 2 + 2.1203x - 13.887 r 2 = 0.9956 y = 0.0961x 2 + 2.1437x - 4.7641 r 2 = 0.9935 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 5 10 15 20 25 30 35 40 t p =100ns t j initial=25c positive polarity negative polarity poly. (positive polarity) poly. (negative polarity) v cl (v) i pp (a)
docid025248 rev 4 7/10 EMIF06-HSD03F3 package information 3 package information ? epoxy meets ul94, v0 ? lead-free package in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. 3.1 flip-chip pa ckage information figure 12. flip-chip package dimensions 400 40 m 400 40 m 1.10 mm 40 m 60 60 m 5 2.40 mm 40 m
package information EMIF06-HSD03F3 8/10 docid025248 rev 4 figure 15. tape and reel specification note: more information is availa ble in the application notes: an2348, ?ipad? 400 m flip chip: packag e description and recommendations for use? an1751, ?emi filters: recomm endations and measurements? an4541: ?emi filters for sd3.0 card: high spee d sd card protection and filtering devices? figure 13. footprint recommendations figure 14. marking 220 m recommended 220 m recommended 260 m maximum solder stencil opening: copper pad diameter: solder mask opening: 300 m minimum x y x w z w dot, st logo xx = marking z = manufacturing location yww = datecode (y = year ww = week) ecopack ? grade ' r w l g h q w l i \ l q j 3 l q 2 o r f d w l r q ? ? ? ? ? ? ? ? ? ? ? 6 7 [ [ ] \ z z 6 7 [ [ ] \ z z 6 7 [ [ ] \ z z 6 7 [ [ ] \ z z 6 7 [ [ ] \ z z
docid025248 rev 4 9/10 EMIF06-HSD03F3 ordering information 4 ordering information figure 16. ordering information scheme 5 revision history table 3. ordering information order code marking package weight base qty delivery mode EMIF06-HSD03F3 kk flip chip 3.4 mg 5000 tape and reel (7?) emif 06 - hsd 03 f3 emi filter number of lines application hsd = high speed sd card version version = 3 package f = flip chip x = 3: lead-free, pitch = 400 m, bump = 255 m table 4. document revision history date revision changes 19-nov-2013 1 initial release 09-jan-2014 2 corrected typographical error. 06-jan-2015 3 added mention for new an4541. 06-oct-2016 updated figure 1 .
EMIF06-HSD03F3 10/10 docid025248 rev 4 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics ? all rights reserved
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